SMAF & SMBF ultra-thin diodes

2021-8-10 17:26:04

New ultra-thin series products SMAF & SMBF package, on the basis of continuous management and accumulation, we have carried out large-scale reforms in SMD. Invest a lot of capital and technology research and development, upgrade traditional products, and realize the real reform of ultra-thin SMAF & SMBF.


The ultra-thin size of the SMAF package can meet the higher requirements of today's rapid technological development of circuit design, and the optimized design of the electrode provides better heat dissipation performance. Using planar technology chips (GPP technology chips and Schottky technology chips), the high temperature reliability of the chips is greatly improved. The thickness is 50% lower than the existing SMA (from 2.2mm to 1.0mm), and it is thinner than SOP-8 and other ICs. Even if it is mounted on the back of the PCB, it will not be affected at all when the device is cut. The pins are designed with extended pins. The pins are flat against the bottom of the device, which is not easy to deform and damage to avoid the virtual soldering phenomenon caused by the unevenness of the two feet like the SMA flattening process.


SMAF & SMBF chip package covers all types of planar diodes. The size ranges from 24MIL to 70MIL, laying the foundation for the next step of miniaturization and application of ultra-low forward VF series diodes.


SMAF & SMBF packageable chip specifications


Chip type:


1. GPP ordinary rectifier bridge diode chip

2. GPP fast rectifier diode chip

3. GPP high-efficiency rectifier diode chip

4. GPP ultra-fast rectifier diode chip

5. Schottky barrier rectifier diode chip

6. GPP-TVS diode chip

7. Unidirectional, bidirectional thyristor diode chip

8. Ultra-low forward series diode chip

9. Other series of planar diode chips


Chip size:

SMAF package: 24, 28, 32, 35, 40, 46, 50...70MIL

SMBF package: 24…50, 60, 68, 70, 80…95ML


SMAF & SMBF advantages: good heat dissipation, low thermal resistance, high junction temperature, high surge resistance design, the lead is flat on the bottom of the device, the heat dissipation path is short, the heat dissipation characteristics of the device are improved, and the technology breakthrough of small size and high power is achieved at the same time .


High cost performance: After several years of technology research and development and gradually realized products are put into mass production, the cost has been close to SMA ordinary products, and a breakthrough in the industry with high quality and high cost performance can be achieved.


Recommended News
LOWVF six-level energy efficiency Schottky diode

LOWVF six-level energy efficiency Schottky diode

In response to the national energy conservation and environmental protection policy, the power supply products have been upgraded to the sixth level of energy efficiency standards. Our company has launched a full series of LOWW diodes and bridge stack…

2021-08-10More

Why do SCRs need to be triggered

Why do SCRs need to be triggered

There are two conditions for the thyristor to conduct. One is to apply a forward voltage between the anode and the cathode, and the other is to apply a trigger voltage to the control pole. The thyristor can be turned on when the two conditions are met…

2021-08-10More

Precautions for Zener Diode in the Actual Circuit

Precautions for Zener Diode in the Actual Circuit

The voltage stabilizing circuit composed of voltage stabilizing diodes, although the stability is not very high, and the output current is also small, but it has the advantages of simplicity, economy and practicality, so it is widely used. In the actu…

2021-08-10More

Technical Support:WangGuang NetworkCopyright © Shenzhen Shenpeng Technology Co., Ltd. all rights reserved.
Products Feedback Email